Simulations of C60 bombardment of Si, SiC, diamond and graphite

نویسندگان

  • Kristin D. Krantzman
  • Roger P. Webb
  • Barbara J. Garrison
چکیده

Molecular dynamics simulations of the 20-keV C60 bombardment at normal incidence of Si, SiC, diamond and graphite targets were performed. The unique feature of these targets is that strong covalent bonds can be formed between carbon atoms from the C60 projectile and atoms in the solid material. The mesoscale energy deposition footprint (MEDF) model is used to gain physical insight into how the sputtering yields depend on the substrate characteristics. A large proportion of the carbon atoms from the C60 projectile are implanted into the lattice structure of the target. The sputtering yield from SiC is twice that from either diamond or Si and this can be explained by both the region of the energized cylindrical tract created by the impact and the number density. On graphite, the yield of sputtered atoms is negligible because the open lattice allows the cluster to deposit its energy deep within the solid. The simulations suggest that build up of carbon with a graphite-like structure would reduce any sputtering from a solid with C60 + bombardment. Published by Elsevier B.V.

برای دانلود رایگان متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Theoretical Study of the Role of Chemistry and Substrate Characteristics in C60 keV Bombardment of Si, SiC, and Diamond by Molecular Dynamics Simulations

This article presents a theoretical study aimed at understanding the reactive nature of carbon in secondary ion mass spectrometry experiments of Si with keV C60. Molecular dynamics simulations are performed to model the bombardment of three different substrates, Si, SiC, and diamond, with normal incident C60 at kinetic energies ranging from 5 to 20 keV. Projectile atoms form strong covalent bon...

متن کامل

Blue-emitting b-SiC fabricated by annealing C60 coupled on porous silicon

C60 molecules were chemically coupled in the pores of porous Si through a coupling agent and then coated with a layer of Si, and followed by N2 annealing. X-ray diffraction results indicate that the fabricated samples contain b-SiC particles which may exist in the pores, in addition to Si, SiO2, and graphite. The photoluminescence ~PL! spectra show an asymmetrical broadband, which can be Gaussi...

متن کامل

Bombardment induced surface chemistry on Si under keV C60 impact

Molecular dynamics simulations of the sputtering of Si by C60 keV bombardment are performed in order to understand the importance of chemical reactions between C atoms from the projectile and Si atoms in the target crystal. The simulations predict the formation of strong covalent bonds between the C and Si atoms, which result in nearly all of the C atoms remaining embedded in the surface after ...

متن کامل

Cluster induced chemistry at solid surfaces: Molecular dynamics simulations of keV C60 bombardment of Si

Molecular dynamics simulations of the sputtering of Si by keV C60 bombardment have been performed as a function of incident kinetic energy at two incident angles, normal incidence and 45 . Nearly all of the C atoms remain embedded in the surface after bombardment because the C atoms from the projectile form strong covalent bonds with the Si atoms in the target. At low incident kinetic energies,...

متن کامل

Molecular dynamics simulations to explore the effect of chemical bonding in the keV bombardment of Si with C60, Ne60 and 12Ne60 projectiles

Depth profiling experiments using secondary ion spectrometry (SIMS) have shown effects that are characteristic to the pairing of the C60 projectile with a Si target. Previous molecular dynamics simulations demonstrate that this unusual behavior is due to the fact that strong covalent bonds are formed between the C atoms in the projectile and the Si atoms in the target, which result in the impla...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

عنوان ژورنال:

دوره   شماره 

صفحات  -

تاریخ انتشار 2008